Surrey researchers Sign in
Back
Properties of hybrid MOVPE/MBE grown GaAsBi/GaAs based near-infrared emitting quantum well lasers
Journal article   Peer reviewed

Properties of hybrid MOVPE/MBE grown GaAsBi/GaAs based near-infrared emitting quantum well lasers

IP Marko, SR Jin, K Hild, Z Batool, ZL Bushell, P Ludewig, W Stolz, K Volz, R Butkute, V Pacebutas, …
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, Vol.30(9), pp.?-?
01/09/2015
DOI: https://doi.org/10.1088/0268-1242/30/9/094008

Abstract

Science & Technology Technology Physical Sciences Engineering Electrical & Electronic Materials Science Multidisciplinary Physics Condensed Matter Engineering Materials Science Physics bismides GaAsBi laser diodes recombination processes temperature performance epitaxy growth HIGH HYDROSTATIC-PRESSURE RECOMBINATION DIODES
url
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000357666500009&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=11d2a86992e85fb529977dad66a846d5View
Author

Metrics

37 Record Views
33 Times Cited - Web of Science

Details

Usage Policy

Usage details for all content viewed and downloaded in this site are shared with IRUS-UK (Institutional Repository Usage Statistics UK). Cookies are used to remember your decision. Click Accept to accept usage details sharing and the cookies.

Learn more