Profile broadening of high dose germanium implants into (100) silicon at elevated temperatures due to channeling

A Nejim; AP Knights; C Jeynes; PG Coleman; CJ Patel

doi:10.1063/1.366573

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Profile broadening of high dose germanium implants into (100) silicon at elevated temperatures due to channeling

A Nejim, AP Knights, C Jeynes, PG Coleman and CJ Patel

JOURNAL OF APPLIED PHYSICS, Vol.83(7), pp.3565-3573

01/04/1998

DOI: https://doi.org/10.1063/1.366573

Abstract

Science & Technology

Physical Sciences

Physics

Applied

Physics

PHYSICS

APPLIED

GE ION-IMPLANTATION

SOLID-PHASE EPITAXY

SIGE/SI HETEROSTRUCTURES

ENHANCED DIFFUSION

HBT STRUCTURES

DEFECTS

SI

POSITRONS

LAYERS

IMPURITIES

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Title: Profile broadening of high dose germanium implants into (100) silicon at elevated temperatures due to channeling
Creators: A Nejim
AP Knights
C Jeynes
PG Coleman
CJ Patel
Publication Details: JOURNAL OF APPLIED PHYSICS, Vol.83(7), pp.3565-3573
Publisher: AMER INST PHYSICS
Date published: 01/04/1998
Date submitted: 17/05/2017
Identifiers: 99511522302346
Academic Unit: University of Surrey
Language: English
Resource Type: Journal article

Profile broadening of high dose germanium implants into (100) silicon at elevated temperatures due to channeling

Abstract

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