Processing and characterisation of sol-gel deposited Ta2O5 and TiO2-Ta2O5 dielectric thin films

A Cappellani; JL Keddie; NP Barradas; SM Jackson

doi:10.1016/S0038-1101(99)00031-3

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Processing and characterisation of sol-gel deposited Ta2O5 and TiO2-Ta2O5 dielectric thin films

Journal article

Peer reviewed

Processing and characterisation of sol-gel deposited Ta2O5 and TiO2-Ta2O5 dielectric thin films

A Cappellani, JL Keddie, NP Barradas and SM Jackson

SOLID-STATE ELECTRONICS, Vol.43(6), pp.1095-1099

01/06/1999

DOI: https://doi.org/10.1016/S0038-1101(99)00031-3

Abstract

Science & Technology

Technology

Physical Sciences

Engineering

Electrical & Electronic

Physics

Applied

Physics

Condensed Matter

Engineering

Physics

ENGINEERING

ELECTRICAL & ELECTRONIC

PHYSICS

APPLIED

PHYSICS

CONDENSED MATTER

high k dielectrics

thin films sol-gel

ellipsometry

rutherford backscattering

simulated annealing

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Title: Processing and characterisation of sol-gel deposited Ta2O5 and TiO2-Ta2O5 dielectric thin films
Creators: A Cappellani
JL Keddie
NP Barradas
SM Jackson
Publication Details: SOLID-STATE ELECTRONICS, Vol.43(6), pp.1095-1099
Publisher: PERGAMON-ELSEVIER SCIENCE LTD
Date published: 01/06/1999
Date submitted: 17/05/2017
Identifiers: 99511213602346
Academic Unit: University of Surrey
Language: English
Resource Type: Journal article

Processing and characterisation of sol-gel deposited Ta2O5 and TiO2-Ta2O5 dielectric thin films

Abstract

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