Pressure-dependent photoluminescence study of epitaxial AlGaN to 19 GPa

P Harmer; MP Halsall; D Wolverson; PJ Parbrook; SJ Henley

doi:10.1088/0268-1242/19/3/L04

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Pressure-dependent photoluminescence study of epitaxial AlGaN to 19 GPa

Journal article

Peer reviewed

Pressure-dependent photoluminescence study of epitaxial AlGaN to 19 GPa

P Harmer, MP Halsall, D Wolverson, PJ Parbrook and SJ Henley

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, Vol.19(3), pp.L22-L24

01/03/2004

DOI: https://doi.org/10.1088/0268-1242/19/3/L04

Abstract

Science & Technology

Technology

Physical Sciences

Engineering

Electrical & Electronic

Materials Science

Multidisciplinary

Physics

Condensed Matter

Engineering

Materials Science

Physics

ENGINEERING

ELECTRICAL & ELECTRONIC

MATERIALS SCIENCE

MULTIDISCIPLINARY

PHYSICS

CONDENSED MATTER

LIGHT-EMITTING-DIODES

III-V NITRIDES

GAN

HETEROSTRUCTURES

PHASE

FILMS

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Title: Pressure-dependent photoluminescence study of epitaxial AlGaN to 19 GPa
Creators: P Harmer
MP Halsall
D Wolverson
PJ Parbrook
SJ Henley
Publication Details: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, Vol.19(3), pp.L22-L24
Publisher: IOP PUBLISHING LTD
Date published: 01/03/2004
Date submitted: 17/05/2017
Identifiers: 99513749502346
Academic Unit: University of Surrey
Language: English
Resource Type: Journal article

Pressure-dependent photoluminescence study of epitaxial AlGaN to 19 GPa

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