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Photovoltaic operation up to 270 K of a strain-compensated AlAs/ In0.84Ga0.16As/AlAs/InAlAs quantum well infrared photodetector
Journal article   Peer reviewed

Photovoltaic operation up to 270 K of a strain-compensated AlAs/ In0.84Ga0.16As/AlAs/InAlAs quantum well infrared photodetector

KT Lai
Applied Physics Letters, Vol.87(19), pp.192113-192113
04/11/2005

Abstract

QWIPs Strain compensated Photovoltaic
url
http://apl.aip.org/View

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