PD/TI BILAYER CONTACTS TO HEAVILY DOPED POLYCRYSTALLINE SILICON

YS TANG; CDW WILKINSON; C JEYNES

doi:10.1063/1.352140

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PD/TI BILAYER CONTACTS TO HEAVILY DOPED POLYCRYSTALLINE SILICON

Journal article

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PD/TI BILAYER CONTACTS TO HEAVILY DOPED POLYCRYSTALLINE SILICON

YS TANG, CDW WILKINSON and C JEYNES

JOURNAL OF APPLIED PHYSICS, Vol.72(1), pp.311-312

01/07/1992

DOI: https://doi.org/10.1063/1.352140

Abstract

Science & Technology

Physical Sciences

Physics

Applied

Physics

PHYSICS

APPLIED

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Title: PD/TI BILAYER CONTACTS TO HEAVILY DOPED POLYCRYSTALLINE SILICON
Creators: YS TANG
CDW WILKINSON
C JEYNES
Publication Details: JOURNAL OF APPLIED PHYSICS, Vol.72(1), pp.311-312
Publisher: AMER INST PHYSICS
Date published: 01/07/1992
Date submitted: 17/05/2017
Identifiers: 99513784502346
Academic Unit: University of Surrey
Language: English
Resource Type: Journal article

PD/TI BILAYER CONTACTS TO HEAVILY DOPED POLYCRYSTALLINE SILICON

Abstract

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