Near room temperature operation of a highly strained short wavelength (2.1 μm) AlAs/In(0.84)Ga(0.16)As/AlAs/InAlAs QWIP

Journal article

KT Lai

Semiconductor Science and Technology, Vol.21(6), pp.813-817

05/05/2006

Abstract

strain-compensated

quantum well infrared photodetector

III-V semiconductors

short wavelength

Near room temperature

url

http://iopscience.iop.org/View

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Title: Near room temperature operation of a highly strained short wavelength (2.1 μm) AlAs/In(0.84)Ga(0.16)As/AlAs/InAlAs QWIP
Creators: KT Lai
Publication Details: Semiconductor Science and Technology, Vol.21(6), pp.813-817
Publisher: INSTITUTE OF PHYSICS PUBLISHING
Date published: 05/05/2006
Date submitted: 17/05/2017
Identifiers: 99515124402346
Academic Unit: University of Surrey
Language: English
Resource Type: Journal article