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Modeling and simulation of the influence of SOI structure on damage evolution and ultra-shallow junction formed by Ge preamorphization implants and solid phase epitaxial regrowth
Journal article   Peer reviewed

Modeling and simulation of the influence of SOI structure on damage evolution and ultra-shallow junction formed by Ge preamorphization implants and solid phase epitaxial regrowth

KRC Mok, B Colombeau, M Jaraiz, P Castrillo, JE Rubio, R Pinacho, MP Srinivasan, F Benistant, I Martin-Bragado and JJ Hamilton
Materials Research Society Symposium Proceedings, Vol.912, pp.99-104
21/11/2006

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