Modeling and experimental characterization of stepped and v-shaped {311} defects in silicon

LA Marques; M Aboy; KJ Dudeck; GA Botton; AP Knights; RM Gwilliam

doi:10.1063/1.4871538

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Modeling and experimental characterization of stepped and v-shaped {311} defects in silicon

Journal article

Peer reviewed

Modeling and experimental characterization of stepped and v-shaped {311} defects in silicon

LA Marques, M Aboy, KJ Dudeck, GA Botton, AP Knights and RM Gwilliam

JOURNAL OF APPLIED PHYSICS, Vol.115(14), ARTN 14351

14/04/2014

DOI: https://doi.org/10.1063/1.4871538

Abstract

Science & Technology

Physical Sciences

Physics

Applied

Physics

PHYSICS

APPLIED

SELF-INTERSTITIAL CLUSTERS

CRYSTALLINE SILICON

MOLECULAR-DYNAMICS

TIGHT-BINDING

POINT-DEFECTS

SI

DIFFUSION

GE

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Title: Modeling and experimental characterization of stepped and v-shaped {311} defects in silicon
Creators: LA Marques
M Aboy
KJ Dudeck
GA Botton
AP Knights
RM Gwilliam
Publication Details: JOURNAL OF APPLIED PHYSICS, Vol.115(14), ARTN 14351
Publisher: AMER INST PHYSICS
Date published: 14/04/2014
Date submitted: 17/05/2017
Identifiers: 99515421702346
Academic Unit: University of Surrey
Language: English
Resource Type: Journal article

Modeling and experimental characterization of stepped and v-shaped {311} defects in silicon

Abstract

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