Single quantum dot (QD) light-emitting diodes were fabricated with side gates in a lateral p-i-n structure. The electroluminescence (EL) energy from the QDs can be controlled independently by the side gates and by forward bias. Stark shifts in EL have been observed up to 0.4 meV as a function of forward injection current, and around 0.7 meV by applying an electric field of 36 kV cm(-1) across the QDs. The independent control of the QD emission energy is an important step towards electrically tuning the coupling between QDs and cavities, and generating entangled-photon sources.