Luminescence studies of defects and piezoelectric fields in InGaN/GaN single quantum wells

SJ Henley; A Bewick; D Cherns; FA Ponce

doi:10.1016/S0022-0248(01)01245-3

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Luminescence studies of defects and piezoelectric fields in InGaN/GaN single quantum wells

Journal article

Peer reviewed

Luminescence studies of defects and piezoelectric fields in InGaN/GaN single quantum wells

SJ Henley, A Bewick, D Cherns and FA Ponce

JOURNAL OF CRYSTAL GROWTH, Vol.230(3-4), pp.481-486

01/09/2001

DOI: https://doi.org/10.1016/S0022-0248(01)01245-3

Abstract

Science & Technology

Physical Sciences

Technology

Crystallography

Materials Science

Multidisciplinary

Physics

Applied

Materials Science

Physics

CRYSTALLOGRAPHY

MATERIALS SCIENCE

MULTIDISCIPLINARY

PHYSICS

APPLIED

defects

quantum wells

piezoelectric materials

semiconducting III-V materials

CENTERS

GAN

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Title: Luminescence studies of defects and piezoelectric fields in InGaN/GaN single quantum wells
Creators: SJ Henley
A Bewick
D Cherns
FA Ponce
Publication Details: JOURNAL OF CRYSTAL GROWTH, Vol.230(3-4), pp.481-486
Publisher: ELSEVIER SCIENCE BV
Date published: 01/09/2001
Date submitted: 17/05/2017
Identifiers: 99515529802346
Academic Unit: University of Surrey
Language: English
Resource Type: Journal article

Luminescence studies of defects and piezoelectric fields in InGaN/GaN single quantum wells

Abstract

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