Low-temperature processing of antimony-implanted silicon

T Alzanki; R Gwilliam; NG Emerson; BJ Sealy

doi:10.1007/s11664-004-0238-z

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Low-temperature processing of antimony-implanted silicon

Journal article

Peer reviewed

Low-temperature processing of antimony-implanted silicon

T Alzanki, R Gwilliam, NG Emerson and BJ Sealy

JOURNAL OF ELECTRONIC MATERIALS, Vol.33(7), pp.767-769

01/07/2004

DOI: https://doi.org/10.1007/s11664-004-0238-z

Abstract

Science & Technology

Technology

Physical Sciences

Engineering

Electrical & Electronic

Materials Science

Multidisciplinary

Physics

Applied

Engineering

Materials Science

Physics

ENGINEERING

ELECTRICAL & ELECTRONIC

MATERIALS SCIENCE

MULTIDISCIPLINARY

PHYSICS

APPLIED

differential Hall effect

rapid thermal annealing

antimony

arsenic

shallow junction formation

Sb

As

Si

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Title: Low-temperature processing of antimony-implanted silicon
Creators: T Alzanki
R Gwilliam
NG Emerson
BJ Sealy
Publication Details: JOURNAL OF ELECTRONIC MATERIALS, Vol.33(7), pp.767-769
Publisher: MINERALS METALS MATERIALS SOC
Date published: 01/07/2004
Date submitted: 17/05/2017
Identifiers: 99515508802346
Academic Unit: University of Surrey
Language: English
Resource Type: Journal article

Low-temperature processing of antimony-implanted silicon

Abstract

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