Low temperature annealing of 4H-SiC Schottky diode edge terminations formed by 30 keV Ar+ implantation

AP Knights; MA Lourenco; KP Homewood; DJ Morrison; NG Wright; S Ortolland; CM Johnson; AG O'Neill; PG Coleman; KP Hilton; MJ Uren

doi:10.1063/1.372443

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Low temperature annealing of 4H-SiC Schottky diode edge terminations formed by 30 keV Ar+ implantation

Journal article

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Low temperature annealing of 4H-SiC Schottky diode edge terminations formed by 30 keV Ar+ implantation

AP Knights, MA Lourenco, KP Homewood, DJ Morrison, NG Wright, S Ortolland, CM Johnson, AG O'Neill, PG Coleman, KP Hilton, …

JOURNAL OF APPLIED PHYSICS, Vol.87(8), pp.3973-3977

15/04/2000

DOI: https://doi.org/10.1063/1.372443

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Title: Low temperature annealing of 4H-SiC Schottky diode edge terminations formed by 30 keV Ar+ implantation
Creators: AP Knights
MA Lourenco
KP Homewood
DJ Morrison
NG Wright
S Ortolland
CM Johnson
AG O'Neill
PG Coleman
KP Hilton
MJ Uren
Publication Details: JOURNAL OF APPLIED PHYSICS, Vol.87(8), pp.3973-3977
Publisher: AMER INST PHYSICS
Date published: 15/04/2000
Date submitted: 17/05/2017
Identifiers: 99513465402346
Academic Unit: University of Surrey
Language: English
Resource Type: Journal article

Low temperature annealing of 4H-SiC Schottky diode edge terminations formed by 30 keV Ar+ implantation

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