Low resistivity layers and Schottky contacts in amorphous silicon by Co+ implantation

RM Gwilliam; S Hutchinson; JM Shannon; NG Emerson; BJ Sealy

doi:10.1049/el:19981658

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Low resistivity layers and Schottky contacts in amorphous silicon by Co+ implantation

Journal article

Peer reviewed

Low resistivity layers and Schottky contacts in amorphous silicon by Co+ implantation

RM Gwilliam, S Hutchinson, JM Shannon, NG Emerson and BJ Sealy

ELECTRONICS LETTERS, Vol.34(25), pp.2441-2442

10/12/1998

DOI: https://doi.org/10.1049/el:19981658

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Science & Technology

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Electrical & Electronic

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ENGINEERING

ELECTRICAL & ELECTRONIC

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Title: Low resistivity layers and Schottky contacts in amorphous silicon by Co+ implantation
Creators: RM Gwilliam
S Hutchinson
JM Shannon
NG Emerson
BJ Sealy
Publication Details: ELECTRONICS LETTERS, Vol.34(25), pp.2441-2442
Publisher: IEE-INST ELEC ENG
Date published: 10/12/1998
Date submitted: 17/05/2017
Identifiers: 99514293702346
Academic Unit: University of Surrey
Language: English
Resource Type: Journal article

Low resistivity layers and Schottky contacts in amorphous silicon by Co+ implantation

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