Light emission from rare-earths in dislocation engineered silicon substrates

MA Lourenco; W Ludurczak; AD Prins; M Milosavljevic; RM Gwilliam; KP Homewood

doi:10.7567/JJAP.54.07JB01

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Light emission from rare-earths in dislocation engineered silicon substrates

Journal article

Peer reviewed

Light emission from rare-earths in dislocation engineered silicon substrates

MA Lourenco, W Ludurczak, AD Prins, M Milosavljevic, RM Gwilliam and KP Homewood

JAPANESE JOURNAL OF APPLIED PHYSICS, Vol.54(7), ARTN 07JB0

01/07/2015

DOI: https://doi.org/10.7567/JJAP.54.07JB01

Abstract

Science & Technology

Physical Sciences

Physics

Applied

Physics

THULIUM-DOPED SILICON

EMITTING DIODE

CRYSTALLINE SILICON

LUMINESCENCE PROPERTIES

OPTICAL-PROPERTIES

RAMAN LASER

MU M

PHOTOLUMINESCENCE

NANOCRYSTALS

SPECTRA

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Title: Light emission from rare-earths in dislocation engineered silicon substrates
Creators: MA Lourenco
W Ludurczak
AD Prins
M Milosavljevic
RM Gwilliam
KP Homewood
Publication Details: JAPANESE JOURNAL OF APPLIED PHYSICS, Vol.54(7), ARTN 07JB0
Publisher: IOP PUBLISHING LTD
Date published: 01/07/2015
Date submitted: 17/05/2017
Identifiers: 99512772502346
Academic Unit: University of Surrey
Language: English
Resource Type: Journal article

Light emission from rare-earths in dislocation engineered silicon substrates

Abstract

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