Abstract
This paper investigates the contributions of leakage current and self-heating to the temperature sensitivity. The amount of self-heating and leakage current is estimated and plotted for a constant light output with increasing temperature for both CW and pulsed operation, and the radiative current density for 650 nm emitting GaInP based resonant cavity light emitting diodes (RCLEDs) is calculated using a drift diffusion model (DDM).The model simulates the distribution of charge carriers within the structure and their recombination mechanisms. The radiative current in GaInP quantum wells is also extracted and plotted. © 2003 IEEE.