Lattice locations of erbium implants in silicon

YS Tang; J Zhang; KC Heasman; BJ Sealy

doi:10.1016/0038-1098(89)90614-5

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Lattice locations of erbium implants in silicon

Journal article

Peer reviewed

Lattice locations of erbium implants in silicon

YS Tang, J Zhang, KC Heasman and BJ Sealy

Solid State Communications, Vol.72(10), pp.991-993

01/01/1989

DOI: https://doi.org/10.1016/0038-1098(89)90614-5

Abstract

The lattice locations of erbium implanted in silicon were studied by backscattering angular scanning in combination with photoluminescence measurements. The results show that the positions of erbium implants depend on annealing conditions and have tetrahedral and/or orthorhombic symmetries in different cases. © 1989.

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Title: Lattice locations of erbium implants in silicon
Creators: YS Tang
J Zhang
KC Heasman
BJ Sealy
Publication Details: Solid State Communications, Vol.72(10), pp.991-993
Date published: 01/01/1989
Date submitted: 17/05/2017
Identifiers: 99513645102346
Academic Unit: University of Surrey
Resource Type: Journal article

Lattice locations of erbium implants in silicon

Abstract

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