LASER ANNEALING OF LOW-DOSE SE-IMPLANTED GAAS STUDIED BY DLTS

NG EMERSON; BJ SEALY

doi:10.1049/el:19800358

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LASER ANNEALING OF LOW-DOSE SE-IMPLANTED GAAS STUDIED BY DLTS

Journal article

Peer reviewed

LASER ANNEALING OF LOW-DOSE SE-IMPLANTED GAAS STUDIED BY DLTS

NG EMERSON and BJ SEALY

ELECTRONICS LETTERS, Vol.16(13), pp.512-514

01/01/1980

DOI: https://doi.org/10.1049/el:19800358

Abstract

Science & Technology

Technology

Engineering

Electrical & Electronic

Engineering

ENGINEERING

ELECTRICAL & ELECTRONIC

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Title: LASER ANNEALING OF LOW-DOSE SE-IMPLANTED GAAS STUDIED BY DLTS
Creators: NG EMERSON
BJ SEALY
Publication Details: ELECTRONICS LETTERS, Vol.16(13), pp.512-514
Publisher: IEE-INST ELEC ENG
Date published: 01/01/1980
Date submitted: 17/05/2017
Identifiers: 99514979902346
Academic Unit: University of Surrey
Language: English
Resource Type: Journal article

LASER ANNEALING OF LOW-DOSE SE-IMPLANTED GAAS STUDIED BY DLTS

Abstract

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