Junction stability of B doped layers in SOI formed with optimized vacancy engineering implants

AJ Smith; NEB Cowern; B Colombeau; R Gwilliam; BJ Sealy; EJH Collart; S Gennaro; D Giubertoni; M Bersani; M Barozzi

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Junction stability of B doped layers in SOI formed with optimized vacancy engineering implants

Journal article

Peer reviewed

Junction stability of B doped layers in SOI formed with optimized vacancy engineering implants

AJ Smith, NEB Cowern, B Colombeau, R Gwilliam, BJ Sealy, EJH Collart, S Gennaro, D Giubertoni, M Bersani and M Barozzi

Ion Implantation Technology, Vol.866, pp.84-87

01/01/2006

Abstract

Science & Technology

Physical Sciences

Physics

Applied

Physics

Condensed Matter

Physics

vacancy engineering

junction stability

boron

SOI

TRANSIENT DIFFUSION

SI

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Title: Junction stability of B doped layers in SOI formed with optimized vacancy engineering implants
Creators: AJ Smith
NEB Cowern
B Colombeau
R Gwilliam
BJ Sealy
EJH Collart
S Gennaro
D Giubertoni
M Bersani
M Barozzi
Contributors: KJ Kirkby
D Chivers
R Gwilliam
A Smith
Publication Details: Ion Implantation Technology, Vol.866, pp.84-87
Publisher: AMER INST PHYSICS
Date published: 01/01/2006
Date submitted: 17/05/2017
Identifiers: 99511443602346
Academic Unit: University of Surrey
Language: English
Resource Type: Journal article

Junction stability of B doped layers in SOI formed with optimized vacancy engineering implants

Abstract

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