Ion beam assisted crystallization of amorphous silicon layers using high current density Gallium beams

Journal article

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Peer reviewed

J England, MW Phaneuf, A Laquerre, A Smith and R Gwilliam

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

2011

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Title: Ion beam assisted crystallization of amorphous silicon layers using high current density Gallium beams
Creators: J England
MW Phaneuf
A Laquerre
A Smith
R Gwilliam
Publication Details: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Date published: 2011
Date submitted: 16/11/2011
Identifiers: 99514621502346
Academic Unit: University of Surrey
Resource Type: Journal article