The fabrication of Ti, Co and Fe silicides on SIMOX materials has been investigated. These multilayer structures have been synthesized by different methods respectively. The physical properties and microstructure have been investigated. The experimental results show that TiSi2 with a low sheet resistance of 4.5Ω/□, can be formed on the thin film SIMOX. An epitaxial CoSi₂ film has been obtained on SIMOX by a solid phase reaction of Co/Ti with Si overlayer of SIMOX. Semiconducting β-FeSi₂ film has been synthesized on SIMOX by solid phase epitaxy.