Intersubband absorption in strain-compensated InAlAs/AlAs/InxGa(1−x)As (x∼0.8) quantum wells grown on InP

Journal article

Peer reviewed

KT Lai

JOURNAL OF APPLIED PHYSICS, Vol.93(10), pp.6065-6067

15/05/2003

Abstract

Intersubband

strain-compensated

III-V and II-VI semiconductors

Quantum wells

url

http://jap.aip.org/View

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Title: Intersubband absorption in strain-compensated InAlAs/AlAs/InxGa(1−x)As (x∼0.8) quantum wells grown on InP
Creators: KT Lai
Publication Details: JOURNAL OF APPLIED PHYSICS, Vol.93(10), pp.6065-6067
Publisher: American Institute of Physics
Date published: 15/05/2003
Date submitted: 17/05/2017
Identifiers: 99514672002346
Academic Unit: University of Surrey
Language: English
Resource Type: Journal article