Intersubband absorption from 2 to 7 μm in strain-compensated double-barrier In(x)Ga(1−x)As multiquantum wells

Journal article

KT Lai

Semiconductor Science and Technology, Vol.19(11), pp.1263-1267

16/09/2004

Abstract

Intersubband absorption

strain-compensated

multiquantum wells

III-V semiconductors

url

http://iopscience.iop.org/View

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Title: Intersubband absorption from 2 to 7 μm in strain-compensated double-barrier In(x)Ga(1−x)As multiquantum wells
Creators: KT Lai
Publication Details: Semiconductor Science and Technology, Vol.19(11), pp.1263-1267
Publisher: INSTITUTE OF PHYSICS PUBLISHING
Date published: 16/09/2004
Date submitted: 17/05/2017
Identifiers: 99514777202346
Academic Unit: University of Surrey
Language: English
Resource Type: Journal article