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Interface Passivation and Trap Reduction via a Solution-Based Method for Near-Zero Hysteresis Nanowire Field-Effect Transistors
Journal article   Open access   Peer reviewed

Interface Passivation and Trap Reduction via a Solution-Based Method for Near-Zero Hysteresis Nanowire Field-Effect Transistors

M Constantinou, V Stolojan, KP Rajeev, S Hinder, B Fisher, TD Bogart, BA Korgel and M Shkunov
ACS APPLIED MATERIALS & INTERFACES, Vol.7(40), pp.22115-22120
14/10/2015

Abstract

Science & Technology Technology Nanoscience & Nanotechnology Materials Science Multidisciplinary Science & Technology - Other Topics Materials Science hysteresis silicon nanowires field-effect transistor nanowire interface DMF XPS interface trap reduction interface passivation SILICON NANOWIRES SEMICONDUCTOR NANOWIRES TEMPERATURE NANOSENSORS OXIDATION SENSORS SI Electronic Engineering
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