Improved optical and electrical properties of low-temperature sputtered GaN by hydrogenation

EC Knox-Davies; SJ Henley; JM Shannon; SRP Silva

doi:10.1063/1.2171780

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Improved optical and electrical properties of low-temperature sputtered GaN by hydrogenation

Journal article

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Improved optical and electrical properties of low-temperature sputtered GaN by hydrogenation

EC Knox-Davies, SJ Henley, JM Shannon and SRP Silva

JOURNAL OF APPLIED PHYSICS, Vol.99(3), pp.?-?

01/02/2006

DOI: https://doi.org/10.1063/1.2171780

Abstract

Science & Technology

Physical Sciences

Physics

Applied

Physics

PHYSICS

APPLIED

GALLIUM NITRIDE FILMS

THIN-FILMS

GROWTH

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Title: Improved optical and electrical properties of low-temperature sputtered GaN by hydrogenation
Creators: EC Knox-Davies
SJ Henley
JM Shannon
SRP Silva
Publication Details: JOURNAL OF APPLIED PHYSICS, Vol.99(3), pp.?-?
Publisher: AMER INST PHYSICS
Date published: 01/02/2006
Date submitted: 27/05/2010
Identifiers: 99513219802346
Academic Unit: School of Computer Science and Electronic Engineering
Language: English
Resource Type: Journal article

Improved optical and electrical properties of low-temperature sputtered GaN by hydrogenation

Abstract

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