Improved modulation performance of a silicon p-i-n device by trench isolation

PD Hewitt; GT Reed

doi:10.1109/50.918892

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Improved modulation performance of a silicon p-i-n device by trench isolation

Journal article

Peer reviewed

Improved modulation performance of a silicon p-i-n device by trench isolation

PD Hewitt and GT Reed

JOURNAL OF LIGHTWAVE TECHNOLOGY, Vol.19(3), pp.387-390

01/03/2001

DOI: https://doi.org/10.1109/50.918892

Abstract

Science & Technology

Technology

Physical Sciences

Engineering

Electrical & Electronic

Optics

Telecommunications

Engineering

ENGINEERING

ELECTRICAL & ELECTRONIC

OPTICS

TELECOMMUNICATIONS

carrier injection

integrated optics

phase modulators

plasma dispersion effect

silicon-on-insulator (SOI) photonics

WAVE-GUIDES

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Title: Improved modulation performance of a silicon p-i-n device by trench isolation
Creators: PD Hewitt
GT Reed
Publication Details: JOURNAL OF LIGHTWAVE TECHNOLOGY, Vol.19(3), pp.387-390
Publisher: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Date published: 01/03/2001
Date submitted: 17/05/2017
Identifiers: 99516182102346
Academic Unit: University of Surrey
Language: English
Resource Type: Journal article

Improved modulation performance of a silicon p-i-n device by trench isolation

Abstract

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