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INFLUENCE OF IN ON SI LOCAL VIBRATIONAL-MODES IN INXGA1-XAS (0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.12)
Journal article   Peer reviewed

INFLUENCE OF IN ON SI LOCAL VIBRATIONAL-MODES IN INXGA1-XAS (0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.12)

AL ALVAREZ, F CALLE, J WAGNER, A SACEDON, M MAIER, SF DEAVILA, MA LOURENCO, E CALLEJA and E MUNOZ
JOURNAL OF APPLIED PHYSICS, Vol.76(12), pp.7797-7804
15/12/1994

Abstract

Science & Technology Physical Sciences Physics Applied Physics PHYSICS APPLIED MOLECULAR-BEAM EPITAXY DOPED GALLIUM-ARSENIDE HEAVILY SI HYDROSTATIC-PRESSURE INFRARED-ABSORPTION SILICON IMPURITIES RAMAN-SCATTERING OHMIC CONTACTS DX CENTERS N-GAAS
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