Hydrogen passivation of titanium impurities in silicon: Effect of doping conditions

P Santos; J Coutinho; VJB Torres; MJ Rayson; PR Briddon

doi:10.1063/1.4891575

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Hydrogen passivation of titanium impurities in silicon: Effect of doping conditions

Journal article

Peer reviewed

Hydrogen passivation of titanium impurities in silicon: Effect of doping conditions

P Santos, J Coutinho, VJB Torres, MJ Rayson and PR Briddon

APPLIED PHYSICS LETTERS, Vol.105(3), ARTN 03210

21/07/2014

DOI: https://doi.org/10.1063/1.4891575

Abstract

Science & Technology

Physical Sciences

Physics

Applied

Physics

SOLAR-GRADE SILICON

SI

REEXAMINATION

COMPLEXES

DEFECTS

CELLS

TI

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Title: Hydrogen passivation of titanium impurities in silicon: Effect of doping conditions
Creators: P Santos
J Coutinho
VJB Torres
MJ Rayson
PR Briddon
Publication Details: APPLIED PHYSICS LETTERS, Vol.105(3), ARTN 03210
Publisher: AMER INST PHYSICS
Date published: 21/07/2014
Date submitted: 17/05/2017
Identifiers: 99515051302346
Academic Unit: University of Surrey
Language: English
Resource Type: Journal article

Hydrogen passivation of titanium impurities in silicon: Effect of doping conditions

Abstract

Files and links (1)

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