Abstract
► Thin ZnO films and high quality ZnO crystal were electrochemically doped with hydrogen. ► Hydrogen absorbed in ZnO causes plastic deformation both in ZnO crystal and thin films. ► In ZnO crystal a sub-surface region with very high density of defects was formed. ► Moreover, plastic deformation causes specific surface modification of ZnO crystal. ► In ZnO films hydrogen-induced plastic deformation introduced defects in the whole film.
ZnO films with thickness of ∼80nm were grown by pulsed laser deposition (PLD) on MgO (100) single crystal and amorphous fused silica (FS) substrates. Structural studies of ZnO films and a high quality reference ZnO single crystal were performed by slow positron implantation spectroscopy (SPIS). It was found that ZnO films exhibit significantly higher density of defects than the reference ZnO crystal. Moreover, the ZnO film deposited on MgO substrate exhibits higher concentration of defects than the film deposited on amorphous FS substrate most probably due to a dense network of misfit dislocations. The ZnO films and the reference ZnO crystal were subsequently loaded with hydrogen by electrochemical cathodic charging. SPIS characterizations revealed that absorbed hydrogen introduces new defects into ZnO.