Highly strained In(x)Ga(1−x)As−In(y)Al(1−y)As (x>0:8; y<0:3) layers for short wavelength QWIP and QCL structures grown by MBE

Journal article

KT Lai

Physica E: Low-Dimensional Systems and Nanostructures, Vol.20(3-4), pp.496-502

01/2004

Abstract

QWIPs

QCL

strain-compensated

MBE

III-V semiconductors

url

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Title: Highly strained In(x)Ga(1−x)As−In(y)Al(1−y)As (x>0:8; y<0:3) layers for short wavelength QWIP and QCL structures grown by MBE
Creators: KT Lai
Publication Details: Physica E: Low-Dimensional Systems and Nanostructures, Vol.20(3-4), pp.496-502
Publisher: Elsevier B.V.
Date published: 01/2004
Date submitted: 17/05/2017
Identifiers: 99515332802346
Academic Unit: University of Surrey
Language: English
Resource Type: Journal article