Highly conductive Sb-doped layers in strained Si

NS Bennett; NEB Cowern; AJ Smith; RM Gwilliam; BJ Sealy; L O'Reilly; PJ McNally; G Cooke; H Kheyrandish

doi:10.1063/1.2382741

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Highly conductive Sb-doped layers in strained Si

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Highly conductive Sb-doped layers in strained Si

NS Bennett, NEB Cowern, AJ Smith, RM Gwilliam, BJ Sealy, L O'Reilly, PJ McNally, G Cooke and H Kheyrandish

APPLIED PHYSICS LETTERS, Vol.89(18), pp.?-?

30/10/2006

DOI: https://doi.org/10.1063/1.2382741

Abstract

Science & Technology

Physical Sciences

Physics

Applied

Physics

PHYSICS

APPLIED

SILICON

DIFFUSION

JUNCTIONS

MOBILITY

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Title: Highly conductive Sb-doped layers in strained Si
Creators: NS Bennett
NEB Cowern
AJ Smith
RM Gwilliam
BJ Sealy
L O'Reilly
PJ McNally
G Cooke
H Kheyrandish
Publication Details: APPLIED PHYSICS LETTERS, Vol.89(18), pp.?-?
Publisher: AMER INST PHYSICS
Date published: 30/10/2006
Date submitted: 27/05/2010
Identifiers: 99512854602346
Academic Unit: School of Computer Science and Electronic Engineering
Language: English
Resource Type: Journal article

Highly conductive Sb-doped layers in strained Si

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