High brightness ZnS and GaN electroluminescent devices using PZT thick dielectric layers

C Munasinghe; J Heikenfeld; R Dorey; R Whatmore; JP Bender; JF Wager; AJ Steckl

doi:10.1109/TED.2004.842542

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High brightness ZnS and GaN electroluminescent devices using PZT thick dielectric layers

Journal article

Peer reviewed

High brightness ZnS and GaN electroluminescent devices using PZT thick dielectric layers

C Munasinghe, J Heikenfeld, R Dorey, R Whatmore, JP Bender, JF Wager and AJ Steckl

IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol.52(2), pp.194-203

01/02/2005

DOI: https://doi.org/10.1109/TED.2004.842542

Abstract

Science & Technology

Technology

Physical Sciences

Engineering

Electrical & Electronic

Physics

Applied

Engineering

Physics

ENGINEERING

ELECTRICAL & ELECTRONIC

PHYSICS

APPLIED

electrical characterization

electroluminescent device

GaN : RE

luminance

lead zirconate titanate (PZT)

thick dielectric (TD)

ZnS : Mn

DOPED GAN

FILM

EMISSION

FABRICATION

PHOSPHOR

GROWTH

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Title: High brightness ZnS and GaN electroluminescent devices using PZT thick dielectric layers
Creators: C Munasinghe
J Heikenfeld
R Dorey
R Whatmore
JP Bender
JF Wager
AJ Steckl
Publication Details: IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol.52(2), pp.194-203
Publisher: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Date published: 01/02/2005
Date submitted: 17/05/2017
Identifiers: 99515410702346
Academic Unit: University of Surrey
Language: English
Resource Type: Journal article

High brightness ZnS and GaN electroluminescent devices using PZT thick dielectric layers

Abstract

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