Full-wave electromagnetic modelling of an InP/InGaAs travelling-wave heterojunction phototransistor

K Tsakmakidis; B Weiss; O Hess

doi:10.1088/0022-3727/39/9/016

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Journal article

Full-wave electromagnetic modelling of an InP/InGaAs travelling-wave heterojunction phototransistor

K Tsakmakidis, B Weiss and O Hess

JOURNAL OF PHYSICS D-APPLIED PHYSICS, Vol.39(9), pp.1805-1814

07/05/2006

DOI: https://doi.org/10.1088/0022-3727/39/9/016

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Science & Technology

Physical Sciences

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APPLIED

NUMERICAL-ANALYSIS

PHOTODETECTORS

DESIGN

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Title: Full-wave electromagnetic modelling of an InP/InGaAs travelling-wave heterojunction phototransistor
Creators: K Tsakmakidis
B Weiss
O Hess
Publication Details: JOURNAL OF PHYSICS D-APPLIED PHYSICS, Vol.39(9), pp.1805-1814
Publisher: IOP PUBLISHING LTD
Date published: 07/05/2006
Date submitted: 17/05/2017
Identifiers: 99512543402346
Academic Unit: University of Surrey
Language: English
Resource Type: Journal article

Full-wave electromagnetic modelling of an InP/InGaAs travelling-wave heterojunction phototransistor

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