Forming in hydrogenated amorphous silicon metal-semiconductor-metal devices using bipolar pulse stressing

JO Orwa; SRP Silva; JM Shannon

doi:10.1049/el:20057595

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Forming in hydrogenated amorphous silicon metal-semiconductor-metal devices using bipolar pulse stressing

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Forming in hydrogenated amorphous silicon metal-semiconductor-metal devices using bipolar pulse stressing

JO Orwa, SRP Silva and JM Shannon

ELECTRONICS LETTERS, Vol.41(2), pp.98-100

20/01/2005

DOI: https://doi.org/10.1049/el:20057595

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Title: Forming in hydrogenated amorphous silicon metal-semiconductor-metal devices using bipolar pulse stressing
Creators: JO Orwa
SRP Silva
JM Shannon
Publication Details: ELECTRONICS LETTERS, Vol.41(2), pp.98-100
Publisher: IEE-INST ELEC ENG
Date published: 20/01/2005
Date submitted: 17/05/2017
Identifiers: 99513248802346
Academic Unit: University of Surrey
Language: English
Resource Type: Journal article

Forming in hydrogenated amorphous silicon metal-semiconductor-metal devices using bipolar pulse stressing

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