Fluorine-vacancy complexes in ultrashallow B-implanted Si

DA Abdulmalik; PG Coleman; NEB Cowern; AJ Smith; BJ Sealy; W Lerch; S Paul; F Cristiano

doi:10.1063/1.2335594

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Fluorine-vacancy complexes in ultrashallow B-implanted Si

Journal article

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Fluorine-vacancy complexes in ultrashallow B-implanted Si

DA Abdulmalik, PG Coleman, NEB Cowern, AJ Smith, BJ Sealy, W Lerch, S Paul and F Cristiano

APPLIED PHYSICS LETTERS, Vol.89(5), pp.?-?

31/07/2006

DOI: https://doi.org/10.1063/1.2335594

Abstract

Science & Technology

Physical Sciences

Physics

Applied

Physics

PHYSICS

APPLIED

BORON THERMAL-DIFFUSION

SILICON

DEFECTS

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Title: Fluorine-vacancy complexes in ultrashallow B-implanted Si
Creators: DA Abdulmalik
PG Coleman
NEB Cowern
AJ Smith
BJ Sealy
W Lerch
S Paul
F Cristiano
Publication Details: APPLIED PHYSICS LETTERS, Vol.89(5), pp.?-?
Publisher: AMER INST PHYSICS
Date published: 31/07/2006
Date submitted: 27/05/2010
Identifiers: 99515521702346
Academic Unit: School of Computer Science and Electronic Engineering
Language: English
Resource Type: Journal article

Fluorine-vacancy complexes in ultrashallow B-implanted Si

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