FORMATION OF ETCH-STOP STRUCTURES UTILIZING ION-BEAM SYNTHESIZED BURIED OXIDE AND NITRIDE LAYERS IN SILICON

IG STOEV; RA YANKOV; C JEYNES

doi:10.1016/0250-6874(89)87070-2

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Journal article

FORMATION OF ETCH-STOP STRUCTURES UTILIZING ION-BEAM SYNTHESIZED BURIED OXIDE AND NITRIDE LAYERS IN SILICON

IG STOEV, RA YANKOV and C JEYNES

SENSORS AND ACTUATORS, Vol.19(2), pp.183-197

15/08/1989

DOI: https://doi.org/10.1016/0250-6874(89)87070-2

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Science & Technology

Physical Sciences

Technology

Chemistry

Analytical

Engineering

Electrical & Electronic

Instruments & Instrumentation

Chemistry

Engineering

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Title: FORMATION OF ETCH-STOP STRUCTURES UTILIZING ION-BEAM SYNTHESIZED BURIED OXIDE AND NITRIDE LAYERS IN SILICON
Creators: IG STOEV
RA YANKOV
C JEYNES
Publication Details: SENSORS AND ACTUATORS, Vol.19(2), pp.183-197
Publisher: ELSEVIER SCIENCE SA LAUSANNE
Date published: 15/08/1989
Date submitted: 17/05/2017
Identifiers: 99513327002346
Academic Unit: University of Surrey
Language: English
Resource Type: Journal article

FORMATION OF ETCH-STOP STRUCTURES UTILIZING ION-BEAM SYNTHESIZED BURIED OXIDE AND NITRIDE LAYERS IN SILICON

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