Evidence of formation of tetravacancies in uniformly oxygen irradiated n-type silicon

Journal article

Peer reviewed

SK Chaudhuri, K Goswami, SS Ghugre and D Das

Physica B: Condensed Matter, Vol.406(3), pp.693-698

2011

Abstract

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Title: Evidence of formation of tetravacancies in uniformly oxygen irradiated n-type silicon
Creators: SK Chaudhuri
K Goswami
SS Ghugre
D Das
Publication Details: Physica B: Condensed Matter, Vol.406(3), pp.693-698
Date published: 2011
Date submitted: 17/05/2017
Identifiers: 99516219402346
Academic Unit: University of Surrey
Resource Type: Journal article