Erbium-doped silicon and porous silicon for optoelectronics

GT Reed; AK Kewell

doi:10.1016/0921-5107(96)01657-1

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Erbium-doped silicon and porous silicon for optoelectronics

Journal article

Peer reviewed

Erbium-doped silicon and porous silicon for optoelectronics

GT Reed and AK Kewell

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, Vol.40(2-3), pp.207-215

01/09/1996

DOI: https://doi.org/10.1016/0921-5107(96)01657-1

Abstract

Science & Technology

Technology

Physical Sciences

Materials Science

Multidisciplinary

Physics

Condensed Matter

Materials Science

Physics

MOLECULAR-BEAM EPITAXY

ROOM-TEMPERATURE LUMINESCENCE

OPTICAL-PHASE MODULATOR

OXYNITRIDE WAVE-GUIDES

1.54-MU-M LUMINESCENCE

EXCITATION MECHANISMS

MODE CHARACTERISTICS

LOCAL-STRUCTURE

CRYSTALLINE SI

SIMOX MATERIAL

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Title: Erbium-doped silicon and porous silicon for optoelectronics
Creators: GT Reed
AK Kewell
Publication Details: MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, Vol.40(2-3), pp.207-215
Publisher: ELSEVIER SCIENCE SA LAUSANNE
Date published: 01/09/1996
Date submitted: 17/05/2017
Identifiers: 99516512502346
Academic Unit: University of Surrey
Language: English
Resource Type: Journal article

Erbium-doped silicon and porous silicon for optoelectronics

Abstract

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