Enhanced antimony activation for ultra-shallow junctions in strained silicon

NS Bennett; AJ Smith; CS Beer; L O'Reilly; B Colombeau; GD Dilliway; R Harper; PJ McNally; R Gwilliam; NEB Cowern; BJ Sealy

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Enhanced antimony activation for ultra-shallow junctions in strained silicon

Journal article

Peer reviewed

Enhanced antimony activation for ultra-shallow junctions in strained silicon

NS Bennett, AJ Smith, CS Beer, L O'Reilly, B Colombeau, GD Dilliway, R Harper, PJ McNally, R Gwilliam, NEB Cowern, …

Doping Engineering for Device Fabrication, Vol.912, pp.59-64

01/01/2006

Abstract

Science & Technology

Technology

Materials Science

Multidisciplinary

Materials Science

Characterization & Testing

Materials Science

SI

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Title: Enhanced antimony activation for ultra-shallow junctions in strained silicon
Creators: NS Bennett
AJ Smith
CS Beer
L O'Reilly
B Colombeau
GD Dilliway
R Harper
PJ McNally
R Gwilliam
NEB Cowern
BJ Sealy
Contributors: BJ Pawlak
KS Jones
SB Felch
M Hane
Publication Details: Doping Engineering for Device Fabrication, Vol.912, pp.59-64
Publisher: MATERIALS RESEARCH SOCIETY
Date published: 01/01/2006
Date submitted: 17/05/2017
Identifiers: 99511377402346
Academic Unit: University of Surrey
Language: English
Resource Type: Journal article

Enhanced antimony activation for ultra-shallow junctions in strained silicon

Abstract

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