Engineering of boron-induced dislocation loops for efficient room-temperature silicon light-emitting diodes

M Milosavljevic; G Shao; MA Lourenco; RM Gwilliam; KP Homewood

doi:10.1063/1.1866492

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Engineering of boron-induced dislocation loops for efficient room-temperature silicon light-emitting diodes

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Engineering of boron-induced dislocation loops for efficient room-temperature silicon light-emitting diodes

M Milosavljevic, G Shao, MA Lourenco, RM Gwilliam and KP Homewood

JOURNAL OF APPLIED PHYSICS, Vol.97(7), pp.?-?

01/04/2005

DOI: https://doi.org/10.1063/1.1866492

Abstract

Science & Technology

Physical Sciences

Physics

Applied

Physics

PHYSICS

APPLIED

ION-IMPLANTED SILICON

SIZE-DISTRIBUTION

EXTENDED DEFECTS

DIFFUSION

BEHAVIOR

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Title: Engineering of boron-induced dislocation loops for efficient room-temperature silicon light-emitting diodes
Creators: M Milosavljevic
G Shao
MA Lourenco
RM Gwilliam
KP Homewood
Publication Details: JOURNAL OF APPLIED PHYSICS, Vol.97(7), pp.?-?
Publisher: AMER INST PHYSICS
Date published: 01/04/2005
Date submitted: 27/05/2010
Identifiers: 99515221602346
Academic Unit: School of Computer Science and Electronic Engineering
Language: English
Resource Type: Journal article

Engineering of boron-induced dislocation loops for efficient room-temperature silicon light-emitting diodes

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