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Electroluminescence from metal-oxide-silicon tunneling diode with ion-beam-synthesized beta-FeSi2 precipitates embedded in the active region
Journal article   Peer reviewed

Electroluminescence from metal-oxide-silicon tunneling diode with ion-beam-synthesized beta-FeSi2 precipitates embedded in the active region

CM Sun, HK Tsang, SP Wong, WY Cheung, N Ke, MA Lourenco and KP Homewood
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Vol.267(7), pp.1081-1084
15/04/2009

Abstract

Science & Technology Technology Physical Sciences Instruments & Instrumentation Nuclear Science & Technology Physics Atomic Molecular & Chemical Physics Nuclear Physics INSTRUMENTS & INSTRUMENTATION NUCLEAR SCIENCE & TECHNOLOGY PHYSICS ATOMIC MOLECULAR & CHEMICAL PHYSICS NUCLEAR beta-FeSi2 precipitates Electroluminescence Ion-beam-synthesis (IBS) Metal-oxide-silicon (MOS) Tunneling light-emitting diode Rapid thermal oxidation (RTO) ROOM-TEMPERATURE ELECTROLUMINESCENCE LIGHT-EMITTING-DIODES MU-M PHOTO-LUMINESCENCE PHOTOLUMINESCENCE DEPENDENCE SI ORIGIN STRAIN FESI2
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