Abstract
It is well known that the InGaAs-InAlAs system is a strong candidate for the development of photonic devices. Although it is normally grown on InP substrate, Si substrate would be of great interest due to its processing state of the art. We have used a new approach to grow, by MBE, Inx Ga1-xAs-In0.52Al0.48As modulation-doped heterostructures on InP:Fe and Si substrates. Electrical transport properties were determined from Hall and Shubnikov-de Haas effect measurements. The experimental results confirmed the two-dimensional character of the electron gas and indicated a population of two-electron sub-bands. The presented results prove the possibility of growing high quality InGaAs/InAlAs material on Si substrate that could have very important applications in the field of electronics and sensors. © 1992.