Electrical properties and carrier transport mechanisms of nanometer-scale ultra-thin channel poly-Si transistors

X Guo; T Ishii; SRP Silva

doi:10.1109/ICSICT.2006.306136

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Journal article

Electrical properties and carrier transport mechanisms of nanometer-scale ultra-thin channel poly-Si transistors

X Guo, T Ishii and SRP Silva

ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings, pp.194-196

02/08/2007

DOI: https://doi.org/10.1109/ICSICT.2006.306136

Abstract

This paper investigates the electrical properties and the carrier transport mechanisms of nanometer-scale ultra-thin channel (≤3.0nm) poly-Si transistors to be guidelines for future process on device optimization and modeling. Devices used for the study are fabricated with a precise control over the film thickness down to sub-nanometer scale. © 2006 IEEE.

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Title: Electrical properties and carrier transport mechanisms of nanometer-scale ultra-thin channel poly-Si transistors
Creators: X Guo
T Ishii
SRP Silva
Publication Details: ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings, pp.194-196
Date published: 02/08/2007
Date submitted: 17/05/2017
Identifiers: 99512354702346
Academic Unit: University of Surrey
Resource Type: Journal article

Electrical properties and carrier transport mechanisms of nanometer-scale ultra-thin channel poly-Si transistors

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