Electrical observation of non-radiative recombination in Er doped Si nano-crystals during thermal quenching of intra-4f luminescence

M Ishii; IF Crowe; MP Halsall; AP Knights; RM Gwilliam; B Hamilton

doi:10.7567/JJAP.53.031302

Back

Electrical observation of non-radiative recombination in Er doped Si nano-crystals during thermal quenching of intra-4f luminescence

Journal article

Peer reviewed

Electrical observation of non-radiative recombination in Er doped Si nano-crystals during thermal quenching of intra-4f luminescence

M Ishii, IF Crowe, MP Halsall, AP Knights, RM Gwilliam and B Hamilton

JAPANESE JOURNAL OF APPLIED PHYSICS, Vol.53(3), ARTN 03130

01/03/2014

DOI: https://doi.org/10.7567/JJAP.53.031302

Abstract

Science & Technology

Physical Sciences

Physics

Applied

Physics

PHYSICS

APPLIED

NANOCRYSTALS

INP

PHOTOLUMINESCENCE

EMISSION

DYNAMICS

SILICON

FILMS

YB3+

Files and links (1)

url

http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000336118300013&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=11d2a86992e85fb529977dad66a846d5View

Author

Metrics

18 Record Views

3 Times Cited - Web of Science

Details

Title: Electrical observation of non-radiative recombination in Er doped Si nano-crystals during thermal quenching of intra-4f luminescence
Creators: M Ishii
IF Crowe
MP Halsall
AP Knights
RM Gwilliam
B Hamilton
Publication Details: JAPANESE JOURNAL OF APPLIED PHYSICS, Vol.53(3), ARTN 03130
Publisher: IOP PUBLISHING LTD
Date published: 01/03/2014
Date submitted: 17/05/2017
Identifiers: 99514494802346
Academic Unit: University of Surrey
Language: English
Resource Type: Journal article

Electrical observation of non-radiative recombination in Er doped Si nano-crystals during thermal quenching of intra-4f luminescence

Abstract

Files and links (1)

Metrics

Details

Usage Policy