Effect of temperature on the transfer characteristic of a 0.5 μm-gate Si:SiGe depletion-mode n-MODFET

V Gaspari; K Fobelets; JE Velazquez-Perez; R Ferguson; K Michelakis; S Despotopoulos; C Papavassilliou

doi:10.1016/j.apsusc.2003.08.066

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Effect of temperature on the transfer characteristic of a 0.5 μm-gate Si:SiGe depletion-mode n-MODFET

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Effect of temperature on the transfer characteristic of a 0.5 μm-gate Si:SiGe depletion-mode n-MODFET

V Gaspari, K Fobelets, JE Velazquez-Perez, R Ferguson, K Michelakis, S Despotopoulos and C Papavassilliou

Applied Surface Science, Vol.224(1-4), pp.390-393

15/03/2004

DOI: https://doi.org/10.1016/j.apsusc.2003.08.066

Abstract

An investigation of the low-temperature operation of a 0.5 μm-gate Si:SiGe depletion-mode n-type modulation-doped field-effect transistor is presented. The investigated temperatures range from T = 300 to 180 K. The benefits of cryogenic operation are discussed. Experimental indications of parallel conduction in the device are presented, as well as their dependence on operating temperature. Measured data are compared with two-dimensional device simulations in MEDICI™ carried out using mobility values from Monte Carlo material calculations. © 2003 Elsevier B.V. All rights reserved.

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Title: Effect of temperature on the transfer characteristic of a 0.5 μm-gate Si:SiGe depletion-mode n-MODFET
Creators: V Gaspari
K Fobelets
JE Velazquez-Perez
R Ferguson
K Michelakis
S Despotopoulos
C Papavassilliou
Publication Details: Applied Surface Science, Vol.224(1-4), pp.390-393
Date published: 15/03/2004
Date submitted: 17/05/2017
Identifiers: 99510931102346
Academic Unit: University of Surrey
Resource Type: Journal article

Effect of temperature on the transfer characteristic of a 0.5 μm-gate Si:SiGe depletion-mode n-MODFET

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