Effect of ion bombardment and annealing on the electrical properties of hydrogenated amorphous silicon metal-semiconductor-metal structures

JO Orwa; JM Shannon; RG Gateru; SRP Silva

doi:10.1063/1.1834710

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Effect of ion bombardment and annealing on the electrical properties of hydrogenated amorphous silicon metal-semiconductor-metal structures

Journal article

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Effect of ion bombardment and annealing on the electrical properties of hydrogenated amorphous silicon metal-semiconductor-metal structures

JO Orwa, JM Shannon, RG Gateru and SRP Silva

JOURNAL OF APPLIED PHYSICS, Vol.97(2), pp.?-?

15/01/2005

DOI: https://doi.org/10.1063/1.1834710

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Science & Technology

Physical Sciences

Physics

Applied

Physics

PHYSICS

APPLIED

DEFECT-POOL MODEL

DAMAGE

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Title: Effect of ion bombardment and annealing on the electrical properties of hydrogenated amorphous silicon metal-semiconductor-metal structures
Creators: JO Orwa
JM Shannon
RG Gateru
SRP Silva
Publication Details: JOURNAL OF APPLIED PHYSICS, Vol.97(2), pp.?-?
Publisher: AMER INST PHYSICS
Date published: 15/01/2005
Date submitted: 27/05/2010
Identifiers: 99512366702346
Academic Unit: School of Computer Science and Electronic Engineering
Language: English
Resource Type: Journal article

Effect of ion bombardment and annealing on the electrical properties of hydrogenated amorphous silicon metal-semiconductor-metal structures

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