Edge and screw dislocations as nonradiative centers in InGaN/GaN quantum well luminescence

D Cherns; SJ Henley; FA Ponce

doi:10.1063/1.1369610

Back

Edge and screw dislocations as nonradiative centers in InGaN/GaN quantum well luminescence

Journal article

Peer reviewed

Edge and screw dislocations as nonradiative centers in InGaN/GaN quantum well luminescence

D Cherns, SJ Henley and FA Ponce

APPLIED PHYSICS LETTERS, Vol.78(18), pp.2691-2693

30/04/2001

DOI: https://doi.org/10.1063/1.1369610

Abstract

Science & Technology

Physical Sciences

Physics

Applied

Physics

PHYSICS

APPLIED

GALLIUM NITRIDE

GAN

LAYERS

Files and links (1)

url

http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000168304700026&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=11d2a86992e85fb529977dad66a846d5View

Author

Metrics

24 Record Views

223 Times Cited - Web of Science

Details

Title: Edge and screw dislocations as nonradiative centers in InGaN/GaN quantum well luminescence
Creators: D Cherns
SJ Henley
FA Ponce
Publication Details: APPLIED PHYSICS LETTERS, Vol.78(18), pp.2691-2693
Publisher: AMER INST PHYSICS
Date published: 30/04/2001
Date submitted: 17/05/2017
Identifiers: 99515818502346
Academic Unit: University of Surrey
Language: English
Resource Type: Journal article

Edge and screw dislocations as nonradiative centers in InGaN/GaN quantum well luminescence

Abstract

Files and links (1)

Metrics

Details

Usage Policy