Abstract
The results of calculations of the energy levels of anti-phase (soliton) defects and a vacancy-soliton complex on reconstructed 90 degree and 30 degree partials in silicon are given. A Phillips-Pandey Hamiltonian and the recursion method were used to evaluate these levels and explore the effect of relaxation of surrounding atoms. These calculations should have relevance to either well-annealed samples of plastically deformed silicon or to samples deformed sufficiently slowly that point defect clusters are not introduced. Such samples are diamagnetic. The diamagnetism of a defect with a single dangling bond can be explained by the Anderson negative-U mechanism and estimates are given which suggest the anti-phase defect (soliton) is indeed of this type. Some implications of this are included.