Abstract
Several authors have presented data from the Hall effect in deformed silicon and they have their own interpretations of their results. The mutual incompatibility of these interpretations will be emphasized in this contribution and a possible resolution of the inconsistencies will be proposed. The suggestion is that there are at least two different defects responsible for the electrical activity of dislocations and one of these defects may combine with dopant atoms when the dopant concentration is high relative to the defect concentration to give yet a third level.