The influence of dopants on stressed solid-phase epitaxy of Si was studied in B-doped material up to B concentration of similar to 3.0 x 10(20) cm(-3) and stress of 1.0 +/- 0.1 GPa. As per the generalized Fermi level shifting model of growth enhancement in the presence of electrically active impurities, it is advanced that application of compressive stress may decreases the energy difference between intrinsic Fermi and acceptor levels thus making dopant and stress effects synergistic in growth kinetics. (C) 2008 American Institute of Physics.